TY  - JOUR
ID  - 1339294
T1  - A low supply voltage SiGe LNA for ultra-wideband frontends
A1  - Barras, David
A1  - Ellinger, Frank
A1  - Jäckel, Heinz
A1  - Hirt, Walter
JA  - Microwave and Wireless Components Letters, IEEE
Y1  - 2004
VL  - 14
IS  - 10
SP  - 469
EP  - 471
SN  - 1531-1309
M2  - doi: 10.1109/lmwc.2004.834556
KW  - 1 V
KW  - 10 dB
KW  - 3.4 to 6.9 GHz
KW  - 3.5 mW
KW  - amplifiers
KW  - BiCMOS integrated circuits
KW  - bipolar CMOS
KW  - feedback
KW  - feedback techniques
KW  - figure of merit
KW  - Ge-Si alloys
KW  - low supply voltage
KW  - low-power electronics 0.25 micron
KW  - low-power low-noise amplifier
KW  - microwave monolithic integrated circuit
KW  - MMIC
KW  - peaking techniques
KW  - SiGe
KW  - ultra-wideband frontends
N2  - A low-power low-noise amplifier (LNA) for ultra-wideband (UWB) radio systems is presented. The microwave monolithic integrated circuit (MMIC) has been fabricated using a commercial 0.25-μm silicon-germanium (SiGe) bipolar CMOS (BiCMOS) technology. The amplifier uses peaking and feedback techniques to optimize its gain, bandwidth and impedance matching. It operates from 3.4 to 6.9GHz, which corresponds with the low end of the available UWB radio spectrum. The LNA has a peak gain of 10dB and a noise figure less than 5dB over the entire bandwidth. The circuit consumes only 3.5mW using a 1-V supply voltage. A figure of merit (FoM) for LNAs considering bandwidth, gain, noise, power consumption, and technology is proposed. The realized LNA circuit is compared with other recently published low-power LNA designs and shows the highest reported FoM.
ER  -