%Aigaion2 BibTeX export from IfE Document Management System
%Wednesday 16 May 2012 10:59:23 PM

@ARTICLE{1242694,
    author = {Ellinger, Frank and Kossel, Marcel and Huber, M. and Schmatz, M. and Kromer, Christian and Sialm, G. and Barras, David and Rodoni, Lucio and von B{\"{u}}ren, George and J{\"{a}}ckel, Heinz},
  keywords = {45 GHz, analog RF IC, circuit simulation, CMOS analogue integrated circuits, digital VLSI CMOS substrates, high-Q RF inductors, microwave integrated circuits, MMIC, parasitic resistance, Q-factor, self resonance frequency, thin film inductors 29 GHz, VLSI},
     month = {Sept.},
     title = {High-Q inductors on digital VLSI CMOS substrate for analog RF applications},
   journal = {Microwave and Optoelectronics Conference, 2003. IMOC 2003. Proceedings of the 2003 SBMO/IEEE MTT-S International},
    volume = {2},
    number = {},
      year = {2003},
     pages = {869-872 vol.2},
      issn = {},
       doi = {},
  abstract = {In this paper, the design, modeling and performance of high-Q RF inductors using aggressively scaled digital VLSI CMOS technology are presented. Quality factors of 12.7 and 10, and self resonance frequencies of 45 GHz and 29 GHz are measured for inductors with values of 0.31 nH and 0.9 nH, respectively. The influence of parasitics is also investigated.}
}