TY  - JOUR
ID  - 1242694
T1  - High-Q inductors on digital VLSI CMOS substrate for analog RF applications
A1  - Ellinger, Frank
A1  - Kossel, Marcel
A1  - Huber, M.
A1  - Schmatz, M.
A1  - Kromer, Christian
A1  - Sialm, G.
A1  - Barras, David
A1  - Rodoni, Lucio
A1  - von Büren, George
A1  - Jäckel, Heinz
JA  - Microwave and Optoelectronics Conference, 2003. IMOC 2003. Proceedings of the 2003 SBMO/IEEE MTT-S International
Y1  - 2003
VL  - 2
IS  - 
SP  - 869
EP  - 872 vol.2
SN  - 
M2  - doi: 
KW  - 45 GHz
KW  - analog RF IC
KW  - circuit simulation
KW  - CMOS analogue integrated circuits
KW  - digital VLSI CMOS substrates
KW  - high-Q RF inductors
KW  - microwave integrated circuits
KW  - MMIC
KW  - parasitic resistance
KW  - Q-factor
KW  - self resonance frequency
KW  - thin film inductors 29 GHz
KW  - VLSI
N2  - In this paper, the design, modeling and performance of high-Q RF inductors using aggressively scaled digital VLSI CMOS technology are presented. Quality factors of 12.7 and 10, and self resonance frequencies of 45 GHz and 29 GHz are measured for inductors with values of 0.31 nH and 0.9 nH, respectively. The influence of parasitics is also investigated.
ER  -